Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
Identifieur interne : 000003 ( Russie/Analysis ); précédent : 000002; suivant : 000004Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
Auteurs : RBID : Pascal:13-0248765Descripteurs français
- Pascal (Inist)
- Laser continu, Microlaser, Etude expérimentale, Gravure ionique réactive, Cristal photonique, Structure 2 dimensions, Composé binaire, Semiconducteur III-V, Indium Phosphure, Matériau optique, Matériau laser, Graphène, Puits quantique semiconducteur, Température ambiante, Lithographie faisceau électron, Indium Phosphoarséniure, Absorbant saturable, In P, InP, 4255S, 4270H, 4260P, 4270Q.
English descriptors
- KwdEn :
- Ambient temperature, Binary compounds, CW lasers, Electron beam lithography, Experimental study, Graphene, III-V semiconductors, Indium Arsenides phosphides, Indium Phosphides, Laser materials, Microlaser, Optical materials, Photonic crystals, Reactive ion etching, Saturable absorbers, Semiconductor quantum wells, Two dimensional structure.
Abstract
In this paper, we describe the design, fabrication and optical characterization of III-V based photonic crystal microcavities. Room-temperature continuous-wave laser emission was measured in these structures including InAsP/InP quantum wells as the active medium. The photonic crystal microcavities were fabricated using electron beam lithography and reactive ion etching techniques. Laser operation was observed in the 1500-1560 nm wavelength range with a lasing threshold pump power of nearly 135 μW for microcavities of 2.5 μm in length. When combined with a graphene saturable absorber, these photonic crystal microlasers could form the basis of a new class of integrated mode-locked microlasers capable of delivering a train of short optical pulses on-chip.
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Pascal:13-0248765Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene</title><author><name sortKey="Pavlova, A S" uniqKey="Pavlova A">A. S. Pavlova</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. M. Prokhorov General Physics Institute, 38, Vavilov Street</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Monat, C" uniqKey="Monat C">C. Monat</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Rojo Romeo, P" uniqKey="Rojo Romeo P">P. Rojo-Romeo</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Seassal, C" uniqKey="Seassal C">C. Seassal</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Regreny, P" uniqKey="Regreny P">P. Regreny</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Obraztsova, E D" uniqKey="Obraztsova E">E. D. Obraztsova</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. M. Prokhorov General Physics Institute, 38, Vavilov Street</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Viktorovitch, P" uniqKey="Viktorovitch P">P. Viktorovitch</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Letartre, X" uniqKey="Letartre X">X. Letartre</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0248765</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0248765 INIST</idno><idno type="RBID">Pascal:13-0248765</idno><idno type="wicri:Area/Main/Corpus">000A02</idno><idno type="wicri:Area/Main/Repository">000302</idno><idno type="wicri:Area/Russie/Extraction">000003</idno></publicationStmt><seriesStmt><idno type="ISSN">1555-130X</idno><title level="j" type="abbreviated">J. nanoelectron. optoelectron.</title><title level="j" type="main">Journal of nanoelectronics and optoelectronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Binary compounds</term><term>CW lasers</term><term>Electron beam lithography</term><term>Experimental study</term><term>Graphene</term><term>III-V semiconductors</term><term>Indium Arsenides phosphides</term><term>Indium Phosphides</term><term>Laser materials</term><term>Microlaser</term><term>Optical materials</term><term>Photonic crystals</term><term>Reactive ion etching</term><term>Saturable absorbers</term><term>Semiconductor quantum wells</term><term>Two dimensional structure</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser continu</term><term>Microlaser</term><term>Etude expérimentale</term><term>Gravure ionique réactive</term><term>Cristal photonique</term><term>Structure 2 dimensions</term><term>Composé binaire</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>Matériau optique</term><term>Matériau laser</term><term>Graphène</term><term>Puits quantique semiconducteur</term><term>Température ambiante</term><term>Lithographie faisceau électron</term><term>Indium Phosphoarséniure</term><term>Absorbant saturable</term><term>In P</term><term>InP</term><term>4255S</term><term>4270H</term><term>4260P</term><term>4270Q</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, we describe the design, fabrication and optical characterization of III-V based photonic crystal microcavities. Room-temperature continuous-wave laser emission was measured in these structures including InAsP/InP quantum wells as the active medium. The photonic crystal microcavities were fabricated using electron beam lithography and reactive ion etching techniques. Laser operation was observed in the 1500-1560 nm wavelength range with a lasing threshold pump power of nearly 135 μW for microcavities of 2.5 μm in length. When combined with a graphene saturable absorber, these photonic crystal microlasers could form the basis of a new class of integrated mode-locked microlasers capable of delivering a train of short optical pulses on-chip.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1555-130X</s0></fA01><fA03 i2="1"><s0>J. nanoelectron. optoelectron.</s0></fA03><fA05><s2>8</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Nanocarbon Photonics and Optoelectronics</s1></fA09><fA11 i1="01" i2="1"><s1>PAVLOVA (A. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>MONAT (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>ROJO-ROMEO (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>SEASSAL (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>REGRENY (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>OBRAZTSOVA (E. D.)</s1></fA11><fA11 i1="07" i2="1"><s1>VIKTOROVITCH (P.)</s1></fA11><fA11 i1="08" i2="1"><s1>LETARTRE (X.)</s1></fA11><fA12 i1="01" i2="1"><s1>OBRAZTSOVA (Elena D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Université de Lyon, Lyon Institute of Nanotechnology (INL), Ecole centrale de Lyon, 36, Avenue Guy de Collongue</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>A. M. Prokhorov General Physics Institute, 38, Vavilov Street</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></fA14><fA15 i1="01"><s1>Nanomaterials Spectroscopy Laboratory, A. M. Prokhorov General Physics Institute, The Russian Academy of Sciences</s1><s2>Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA15><fA20><s1>42-45</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27962</s2><s5>354000500659870070</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0248765</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of nanoelectronics and optoelectronics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, we describe the design, fabrication and optical characterization of III-V based photonic crystal microcavities. Room-temperature continuous-wave laser emission was measured in these structures including InAsP/InP quantum wells as the active medium. The photonic crystal microcavities were fabricated using electron beam lithography and reactive ion etching techniques. Laser operation was observed in the 1500-1560 nm wavelength range with a lasing threshold pump power of nearly 135 μW for microcavities of 2.5 μm in length. When combined with a graphene saturable absorber, these photonic crystal microlasers could form the basis of a new class of integrated mode-locked microlasers capable of delivering a train of short optical pulses on-chip.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55S</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B70H</s0></fC02><fC02 i1="03" i2="3"><s0>001B40B60P</s0></fC02><fC02 i1="04" i2="3"><s0>001B40B70Q</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Laser continu</s0><s5>11</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>CW lasers</s0><s5>11</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Microlaser</s0><s5>12</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Microlaser</s0><s5>12</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Microlaser</s0><s5>12</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>29</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0><s5>29</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Gravure ionique réactive</s0><s5>30</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Reactive ion etching</s0><s5>30</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Grabado iónico reactivo</s0><s5>30</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Cristal photonique</s0><s5>47</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Photonic crystals</s0><s5>47</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Structure 2 dimensions</s0><s5>48</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Two dimensional structure</s0><s5>48</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Estructura 2 dimensiones</s0><s5>48</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>51</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>51</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium Phosphure</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium Phosphides</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Matériau optique</s0><s5>53</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Optical materials</s0><s5>53</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Matériau laser</s0><s5>57</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Laser materials</s0><s5>57</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Graphène</s0><s5>61</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Graphene</s0><s5>61</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Graphene</s0><s5>61</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0><s5>62</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0><s5>62</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Température ambiante</s0><s5>63</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>63</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Lithographie faisceau électron</s0><s5>65</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Electron beam lithography</s0><s5>65</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Indium Phosphoarséniure</s0><s2>NC</s2><s2>NA</s2><s5>66</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium Arsenides phosphides</s0><s2>NC</s2><s2>NA</s2><s5>66</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Fosfoarseniuro</s0><s2>NC</s2><s2>NA</s2><s5>66</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Absorbant saturable</s0><s5>67</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Saturable absorbers</s0><s5>67</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>4255S</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>4270H</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>4260P</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>4270Q</s0><s4>INC</s4><s5>91</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Semiconducteur bande interdite nulle</s0><s5>69</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Zero band gap semiconductors</s0><s5>69</s5></fC07><fN21><s1>238</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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